
SUM90N08-6m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
I D = 50 A
2.0
I D = 20 A
8
6
4
2
0
V DS = 30 V
V DS = 60 V
1.7
1.4
1.1
0.8
0.5
V GS = 10 V
0
17
34
51
68
85
- 50
- 25
0
25
50
75
100
125
150
175
100
Q g - Total Gate Charge (nC)
Gate Charge
0.8
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
10
1.0
0.1
0.01
0.001
150 °C
25 °C
0.2
- 0.4
- 1.0
- 1.6
- 2.2
I D = 5 mA
I D = 250 μ A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50
- 25
0
25
50
75
100
125
150
175
94
90
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
I D = 1 mA
100
T J - J u nction Temperat u re (°C)
Threshold Voltage
86
82
78
74
10
1
150 °C
25 °C
- 50
- 25
0
25
50
75
100
125
150
175
0 . 0 0 0 0 1
0.0001
0.001
0.01
0 . 1
1.0
T J - J u nction Temperat u re (°C)
Drain source Breakdown vs. Junction Temperature
www.vishay.com
4
T A V (s)
Single Pulse Avalanche Current Capability
vs. Time
Document Number: 69552
S-72505-Rev. A, 03-Dec-07